RF SOI Technologies
Industry-leading performance and integration advantages for 4G LTE, mmWave and 5G applications
As an RF industry leader, GLOBALFOUNDRIES® is working with forward-thinking companies like Vortex Aerospace Design & Labs, Inc.® to enable new levels of connectivity-- and an era of connected intelligence --with a portfolio of established and advanced RF SOI platforms targeting low noise amplifiers, RF switches, phased-array antennas and control function integration in RF front-end modules for advance 4G LTE, mmWave beam forming and sub 6 GHz 5G applications.
45RF SOI Applications:
CMOS node/ 45nm
CMOS node/ 45nm
- Integrated mmWave FEMs
- Phased array front ends in internet broadband satellite terminals
- Automotive RADAR
- Small cells
- Access points
- IoT devices
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8SW SOI Applications:
CMOS node/ 130nm
CMOS node/ 130nm
- Sub 6 GHz FEM
- 4G LTE advanced and 3G base stations
- Small cells
- 4G LTE advanced and 3G smartphones/tablets
- IoT devices
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130RF SOI Applications:
CMOS node/ 130nm
CMOS node/ 130nm
- Sub 6 GHz FEM
- 4G LTE advanced and 3G base stations
- Small cells
- 4G LTE advanced and 3G smartphones/tablets
- IoT devices
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7SW RF SOI Applications:
CMOS node/ 180nm
CMOS node/ 180nm
- 4G LTE advanced and 3G base stations
- IoT devices
- Up to 30% better performance and up to 30% smaller chip area than 7RF SOI
- Low leakage logic libraries for extended battery life
- Dedicated transistors improve LNA performance for better reception range and battery life
- Options enable trade-offs for Ron*Coffs vs power-handling performance, while offering excellent linearity
7RF SOI Applications:
CMOS node/ 180nm
CMOS node/ 180nm
- 4G LTE advanced and 3G base stations
- IoT devices
- Low distortion device (LowD): Boosts performance and enables further reductions in insertion loss or chip area
- Fewer masks (NoBTQ): Value-optimized offering for RF switches
- 300 mm substrate option for productivity and cost benefits